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Creators/Authors contains: "Huang, T."

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  1. We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035. 
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  2. Free, publicly-accessible full text available July 1, 2025
  3. We probe the conduction-band offsets (CBOs) and confined states at GaAs/GaAsNBi quantum wells (QWs). Using a combination of capacitance–voltage (C–V) measurements and self-consistent Schrödinger–Poisson simulations based on the effective mass approximation, we identify an N-fraction dependent increase in CBO, consistent with trends predicted by the band anti-crossing model. Using the computed confined electron states in conjunction with photoluminescence spectroscopy data, we show that N mainly influences the conduction band and confined electron states, with a relatively small effect on the valence band and confined hole states in the quaternary QWs. This work provides important insight toward tailoring CBO and confined electron energies, both needed for optimizing infrared optoelectronic devices. 
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