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Creators/Authors contains: "Hwang, James C. M."

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  1. ; ; ( , IEEE Journal of Microwaves)
  2. ; ; ; ; ; ; ; ( , Semiconductor Science and Technology)
    Abstract

    Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.

     
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  3. ; ; ; ; ; ; ; ( , IEEE Journal of the Electron Devices Society)
  4. ; ; ; ; ; ; ; ; ; ( , Applied Physics Letters)