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Next generation electronics on the ultrawide-bandgap aluminum nitride platform

https://doi.org/10.1088/1361-6641/abe5fd

Hickman, Austin Lee ; Chaudhuri, Reet ; Bader, Samuel James ; Nomoto, Kazuki ; Li, Lei ; Hwang, James C. M. ; Grace Xing, Huili ; Jena, Debdeep ( March 2021 , Semiconductor Science and Technology)

Abstract
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.

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2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC

https://doi.org/10.1002/pssa.202200774

Hickman, Austin ; Chaudhuri, Reet ; Li, Lei ; Nomoto, Kazuki ; Moser, Neil ; Elliott, Michael ; Guidry, Matthew ; Shinohara, Keisuke ; Hwang, James C. M. ; Xing, Huili Grace ; et al ( January 2023 , physica status solidi (a))

Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. Herein, load‐pull power performance at 30 and 94 GHz for AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power‐added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power () of 2.5 and 1.7 W mm⁻¹, at 30 and 94 GHz, respectively. At 94 GHz, the maximum generated is 2.2 W mm⁻¹, with associated PAE of 13%.

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First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

https://doi.org/10.1109/JEDS.2020.3042050

Hickman, Austin ; Chaudhuri, Reet ; Li, Lei ; Nomoto, Kazuki ; Bader, Samuel James ; Hwang, James C. M. ; Xing, Huili Grace ; Jena, Debdeep ( January 2021 , IEEE Journal of the Electron Devices Society)
Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures

https://doi.org/10.1063/5.0072358

Wang, Xiaopeng ; Fabi, Gianluca ; Chaudhuri, Reet ; Hickman, Austin ; Asadi, Mohammad Javad ; Nomoto, Kazuki ; Xing, Huili Grace ; Jena, Debdeep ; Farina, Marco ; Hwang, James C. M. ( January 2022 , Applied Physics Letters)