A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/
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Abstract β -Ga2O3Schottky barrier diodes (SBDs) and NiO/β -Ga2O3heterojunction diodes (HJDs) is reported. The fabricated devices showed a lowR on,spof 6.2 mΩ cm2for SBDs and 6.8 mΩ cm2for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-classβ -Ga2O3diodes. -
Zaman, Ayesha ; Subramanyam, Guru ; Shin, Eunsung ; Yakopcic, Chris ; Taha, Tarek M. ; Islam, Ahmad Ehteshamul ; Ganguli, Sabyasachi ; Dorsey, Donald ; Roy, Ajit ( , ECS Journal of Solid State Science and Technology)null (Ed.)
