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Incorporation of polar side chains on organic semiconducting materials have been used recently in thermoelectric materials to increase dopant:semiconductor miscibility and stability to further increase the performance and durability of devices. However, investigations into how polar side chains can affect the structure and energetics of polythiophenes compared to non-polar alkyl side chains are usually carried out using materials with no common morphological structure. Within this work we systematically investigate the increase in polar side chain content on poly(3-hexylthiophene) (P3HT) and how the optical, electrochemical, and structural properties are affected. We find a decreasing degree of aggregation with increasing polar side chain content leading to lower charge carrier mobilities. Upon doping with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), we find that the electrical conductivity is reduced when incorporating the polar side chain and no stabilising effect is demonstrated when annealing the doped thin films at raised temperatures. This study emphasises that polar functionalities do not always increase dopant:semiconductor interactions and can harm desirable structural and electrical characteristics, and therefore should be incorporated into organic semiconductors with caution. 

There is a critical need to develop a method to pattern semiconducting polymers for device applications on the sub-micrometer scale. Dopant induced solubility control (DISC) patterning is a recently published method for patterning semiconductor polymers that has demonstrated sub-micron resolution. DISC relies on the sequential addition of molecular dopants (here 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)) to the conjugated polymer. In doped areas, the conjugated polymer is protected from dissolution while in undoped areas, the polymer dissolves into solution. Here we examine factors that affect the resolution of the developed pattern. Two factors are determined to be critical to pattern resolution, the initial crystallinity of the polymer, here poly(3-hexylthiophene) (P3HT), and the quality of the development solvent. We find that dopants diffuse more readily in highly crystalline films than in amorphous films of P3HT and that dopant diffusion reduces the fidelity of the resulting pattern. We also find that the choice of development solvent affects both the fidelity of the pattern and dopant distribution within the patterned polymer domains. Finally, we show that a dopant that diffuses more slowly than F4TCNQ in the P3HT film can be used to pattern the film with higher fidelity. These results together provide a road map for optimizing additive DISC patterning for any polymer/dopant pair. 

When an organic semiconductor (OSC) is blended with an electron acceptor molecule that can act as a p-type dopant, there should ideally be complete (integer) transfer of charge from the OSC to the dopant. However, some dopant–OSC blends instead form charge transfer complexes (CTCs), characterized by fractional charge transfer (CT) and strong orbital hybridization between the two molecules. Fractional CT doping does not efficiently generate free charge carriers, but it is unclear what conditions lead to incomplete charge transfer. Here we show that by modifying film processing conditions in the semiconductor–dopant couple poly(3-hexylthiophene):2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (P3HT:F4TCNQ), we can selectively obtain nearly pure integer or fractional CT phases. Fractional CT films show electrical conductivities approximately 2 orders of magnitude lower than corresponding integer CT films, and remarkably different optical absorption spectra. Grazing incidence wide-angle X-ray diffraction (GIXD) reveals that fractional CT films display an unusually dense and well-ordered crystal structure. These films show lower paracrystallinity and shorter lamellar and π-stacking distances than undoped films processed under similar conditions. Using plane-wave DFT we obtain a structure with unit cell parameters closely matching those observed by GIXD. This first-ever observation of both fractional and integer CT in a single OSC–dopant system demonstrates the importance of structural effects on OSC doping and opens the door to further studies. 

Abstract Molecular doping—the use of redox‐active small molecules as dopants for organic semiconductors—has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox‐active character of these materials. A recent breakthrough was a doping technique based on ion‐exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno(3,2‐b)thiophene) (PBTTT) doped with FeCl₃and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm⁻¹and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl₃, are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.