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Abstract Precisecis-regulatory control of gene expression is essential for plant growth. InArabidopsis thaliana, PLANT PEPTIDE CONTAINING SULFATED TYROSINE (PSY) peptides and their receptors (PSYRs) mediate growth-stress trade-offs, yet the transcriptional regulation of these genes remains poorly understood. Here, we mapped transcription factor (TF)-promoter interactions for ninePSYand threePSYRgenes by combining high-throughput enhanced yeast one-hybrid screening with DNA Affinity Purification sequencing (DAP-seq) data, uncovering 1,207 interactions that reveal both shared and gene-specific regulatory relationships, defining the global TF-promoter interaction network of thePSY/PSYRpathway. Functional analysis of 25 TF mutants identified 12 regulators that significantly influence root growth, most acting as repressors. Of these, CYTOKININ RESPONSE FACTOR 10 (CRF10) emerged as a strong growth inhibitor. We identified a CRF10-binding motif in thePSYR3promoter using DAP-seq data and validated it using eY1H. This motif is also located in the last 3′ terminal exon ofTopoisomerase 3A(TOP3A). Guided by these insights, we used CRISPR/Cas9-mediated promoter editing to delete a small region encompassing or flanking a functional TF-binding site (TFBS). Removal of this motif, or of its surrounding region, enhanced root growth, yielding variants that retained root length comparable to thecrf10mutant. Our results suggest that the observed root growth phenotype results either from disruption of the CRF10 binding motif or from the mutation in theTOP3Aexon. 

Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.