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Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well. 

ABSTRACT The great power offered by photoionization models of active galactic nuclei emission line regions has long been mitigated by the fact that very little is known about the spectral energy distribution (SED) between the Lyman limit, where intervening absorption becomes a problem, and  0.3 keV, where soft X-ray observations become possible. The emission lines themselves can, to some degree, be used to probe the SED, but only in the broadest terms. This paper employs a new generation of theoretical SEDs that are internally self-consistent, energy conserving, and tested against observations, to infer properties of the emission-line regions. The SEDs are given as a function of the Eddington ratio, allowing emission-line correlations to be investigated on a fundamental basis. We apply the simplest possible tests, based on the foundations of photoionization theory, to investigate the implications for the geometry of the emission-line region. The SEDs become more far-ultraviolet bright as the Eddington ratio increases, so the equivalent widths of recombination lines should also become larger, an effect that we quantify. The observed lack of correlation between Eddington ratio and equivalent width shows that the cloud covering factor must decrease as Eddington ratio increases. This would be consistent with recent models proposing that the broad-line region is a failed dusty wind off the accretion disc.