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Creators/Authors contains: "Jo, Seong Soon"

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  3. Abstract

    The synthesis of large‐area TiS2thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H2S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because TiO bonds present a substantial kinetic and thermodynamic barrier to TiS2formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS2and related transition metal dichalcogenides—including metastable phases and alloys—into device technology.

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