skip to main content

Attention:

The NSF Public Access Repository (NSF-PAR) system and access will be unavailable from 11:00 PM ET on Thursday, October 10 until 2:00 AM ET on Friday, October 11 due to maintenance. We apologize for the inconvenience.


Search for: All records

Creators/Authors contains: "Ketterson, John B."

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. We report on flux-flow properties of 50 nmthick thinfilm amorphous MoGe bridges of different sizes with and without patterned sub-micron holes with different diameters and spacings. Characterization of the devices was carried out in liquid He at 4.2 K in a magnetic field, H, applied perpendicular to the device plane. Two critical currents, Ic1 and Ic2, were studied. The current Ic1 is identified as the onset of a low-resistance state, whereas Ic2 is the current at which the device switches to a high-resistance state, and the corresponding dependences Ic1(H) and Ic2(H) were determined. In the absence of the holes, Ic1 decreases monotonically with H, whereas Ic2(H) manifests lobes resembling those in the Fraunhofer-like pattern characteristic of Josephson junctions. This behavior may be due to formation of an ordered vortex lattice in some current and field ranges. Introducing the hole-line arrays modifies both Ic1(H) and Ic2(H) in a way that is most complicated for larger hole diameters. 
    more » « less
    Free, publicly-accessible full text available May 1, 2025
  2. An unconventional “heteromorphic” superlattice (HSL) is realized, comprised of repeated layers of different materials with differing morphologies: semiconducting pc-In2O3 layers interleaved with insulating a-MoO3 layers. Originally proposed by Tsu in 1989, yet never fully realized, the high quality of the HSL heterostructure demonstrated here validates the intuition of Tsu, whereby the flexibility of the bond angle in the amorphous phase and the passivation effect of the oxide at interfacial bonds serve to create smooth, high-mobility interfaces. The alternating amorphous layers prevent strain accumulation in the polycrystalline layers while suppressing defect propagation across the HSL. For the HSL with 7:7 nm layer thickness, the observed electron mobility of 71 cm2/Vs, matches that of the highest quality In2O3 thin films. The atomic structure and electronic properties of crystalline In2O3 / amorphous MoO3 interfaces are verified using ab-initio molecular dynamics simulations and hybrid functional calculations. This work generalizes the superlattice concept to an entirely new paradigm of morphological combinations. 
    more » « less
  3. null (Ed.)