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Abstract Charge density waves are emergent quantum states that spontaneously reduce crystal symmetry, drive metal-insulator transitions, and precede superconductivity. In low-dimensions, distinct quantum states arise, however, thermal fluctuations and external disorder destroy long-range order. Here we stabilize ordered two-dimensional (2D) charge density waves through endotaxial synthesis of confined monolayers of 1T-TaS₂. Specifically, an ordered incommensurate charge density wave (oIC-CDW) is realized in 2D with dramatically enhanced amplitude and resistivity. By enhancing CDW order, the hexatic nature of charge density waves becomes observable. Upon heating via in-situ TEM, the CDW continuously melts in a reversible hexatic process wherein topological defects form in the charge density wave. From these results, new regimes of the CDW phase diagram for 1T-TaS₂are derived and consistent with the predicted emergence of vestigial quantum order. 

Abstract Non‐collinear antiferromagnets (AFMs) are an exciting new platform for studying intrinsic spin Hall effects (SHEs), phenomena that arise from the materials’ band structure, Berry phase curvature, and linear response to an external electric field. In contrast to conventional SHE materials, symmetry analysis of non‐collinear antiferromagnets does not forbid non‐zero longitudinal and out‐of‐plane spin currents with polarization and predicts an anisotropy with current orientation to the magnetic lattice. Here, multi‐component out‐of‐plane spin Hall conductivities are reported in L1₂‐ordered antiferromagnetic PtMn₃thin films that are uniquely generated in the non‐collinear state. The maximum spin torque efficiencies (ξ  =J_S /J_e ≈ 0.3) are significantly larger than in Pt (ξ  ≈  0.1). Additionally, the spin Hall conductivities in the non‐collinear state exhibit the predicted orientation‐dependent anisotropy, opening the possibility for new devices with selectable spin polarization. This work demonstrates symmetry control through the magnetic lattice as a pathway to tailored functionality in magnetoelectronic systems.