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Gallium-based liquid metals are unique in their deformably, conductive nature and the oxide that grows natively on their surface. The oxide of galinstan, gallium–indium–tin, is composed of Ga/In/Sn oxides known for their semiconducting properties. The native galinstan oxide, however, is amorphous and improving electrical properties is understudied. In this work, annealing, a method for improving conductivity and hardness in metals and ceramics, is studied to control galinstan oxide crystallinity, modulus, and resistivity. It was found that while annealing increases crystallinity and grain size, local composition and thickness must also be considered when analyzing galinstan oxide electrical and mechanical properties.more » « less
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Bury, Elizabeth; Koh, Amanda S. (, ACS Applied Materials & Interfaces)
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