Wafer bonding of
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Abstract β ‐Ga2O3and N‐polar GaN single crystal substrates is demonstrated by adding ZnO as a “glue” interlayer. The wafers are fully bonded such that Newton rings are not observed. Temperature‐dependent current‐voltage (I –V ) measurements are conducted on the as‐bonded Ga2O3/ZnO/N‐polar GaN test structure and after annealing at 600 °C and 1100 °C. The impact of post‐annealing temperature on the electrical and structural characteristics of the bonded samples is investigated. A consistently ohmic‐like characteristic is obtained by annealing the bonded wafers at 1100 °C in N2,which is in part due to crystallization of ZnO and diffusion of Ga into ZnO which makes it n‐type doped. The wafer bonding ofβ ‐Ga2O3and GaN achieved in this work is promising to combine the material merits of both GaN and Ga2O3targeting breakthrough high‐frequency and high‐power device performances.