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Newly discovered silicon nitride quantum emitters hold great promise for industrial-scale quantum photonic applications. We assess the performance of intrinsic room-temperature SiN single-photon emitters for quantum key distribution, showcasing their exceptional brightness and single-photon purity. 

We report on the generation of single-photon emitters in aluminum nitride films through Zr-ion implantation, which was predicted to form optically addressable spin defects. We studied implantation conditions, post-implantation procedures, and properties of resulting emitters. 

We create intrinsic quantum emitters in silicon nitride, study their structure and temperature-dependent optical properties, and demonstrate monolithic integration with photonic waveguides to evaluate the potential of these single-photon sources for quantum information applications. 

We report the first demonstration of single silicon vacancy center creation in 20 nm nanodiamonds using silicon ion implantation combined with thermal annealing. Room-temperature single photon emission with linewidth below 10 nm is observed. 

Abstract Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV − ) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV − centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV − centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV − centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ∼20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine. 

We report on the generation of single-photon emitters in silicon nitride. We demonstrate monolithic integration of these quantum emitters with silicon nitride waveguides showing a room-temperature off-chip count-rate of ~10⁴counts/s and clear antibunching behavior. 

A high yield (67%) method of creating single photon emitters in annealed silicon nitride on silicon oxide pillars is demonstrated. Furthermore, the SPE emitter placement precision is found to be between ±30nm- ±85nm. 

We demonstrated large scale deterministic creation of single photon emitters in annealed silicon nitride on silicon oxide pillars. The estimated single photon emitter yield is approximately 50% with a lateral accuracy of ±85nm. 

Silicon nitride has great potential for integrated quantum photonics. We demonstrate monolithic integration of intrinsic quantum emitters in SiN with waveguides which show a room-temperature off-chip count rate of ~10⁴counts/s and clear antibunching behavior.