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  1. Free, publicly-accessible full text available May 1, 2023
  2. This paper presents a wearable motion tracking system with recording and playback features. This system has been designed for gait analysis and interlimb coordination studies. It can be implemented to help reduce fall risk and to retrain gait in a rehabilitation setting. Our system consists of ten custom wearable straps, a receiver, and a central computer. Comparing with similar existing solutions, the proposed system is affordable and convenient, which can be used in both indoor and outdoor settings. In the experiment, the system calculates five gait parameters and has the potential to identify deviant gait patterns. The system can track upper body parameters such as arm swing, which has potential in the study of pathological gaits and the coordination of the limbs.
  3. Free, publicly-accessible full text available January 20, 2023
  4. Abstract This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet potassium hydroxide etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N 2 formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots duemore »to leakage current and nonradiative recombination.« less