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Creators/Authors contains: "Li, Songying"

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  1. ; ; (, ECS Transactions)
    Hexagonal boron nitride (h-BN) is a promising material for next-generation electronics due to its unique optoelectronic and electronic properties. While the synthesis of h-BN on metallic substrates has been studied extensively, h-BN synthesis on CMOS-compatible substrates like Ge has not. Here, we report the growth of h-BN on Ge(001) from borazine via high-vacuum chemical vapor deposition. We find that the sublimation of Ge under high vacuum inhibits h-BN growth. To overcome this challenge, we place two Ge substrates face-to-face and achieve the growth of aligned h-BN islands and monolayer h-BN films. 
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  2. ; ; ; ; (, RSC Advances)
    hBN is deposited onto semiconducting substrates with control over the domain alignment (including close-to-unidirectional alignment) and monolayer quality. 
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  3. ; ; ; (, ACS Biomaterials Science & Engineering)
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