skip to main content
Explore Scholarly Publications and Datasets in the NSF-PAR

  • Home
  • Search Results
  • Page 1 of 22

Search for: All records

Creators/Authors contains: "Luo, X."

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. ; ; ; ; ; ; ; ; ; ; et al ( , Science)
    Realizing quantum speedup for practically relevant, computationally hard problems is a central challenge in quantum information science. Using Rydberg atom arrays with up to 289 qubits in two spatial dimensions, we experimentally investigate quantum algorithms for solving the Maximum Independent Set problem. We use a hardware-efficient encoding associated with Rydberg blockade, realize closed-loop optimization to test several variational algorithms, and subsequently apply them to systematically explore a class of graphs with programmable connectivity. We find the problem hardness is controlled by the solution degeneracy and number of local minima, and experimentally benchmark the quantum algorithm’s performance against classical simulated annealing.more »On the hardest graphs, we observe a superlinear quantum speedup in finding exact solutions in the deep circuit regime and analyze its origins.« less
    Free, publicly-accessible full text available May 5, 2023
  2. ; ; ( , IEEE International Conference on Communications)
    Free, publicly-accessible full text available June 1, 2022
  3. ; ; ; ; ; ; ; ; ; ( , Composites science and technology)
    Self-healing triboelectric nanogenerators (SH-TENGs) with fast self-healing, high output performance, and wearing comfort have wide and promising applications in wearable electronic devices. This work presents a high-performance hydrogel-based SH-TENG, which consists of a high dielectric triboelectric layer (HDTL), a self-healing hydrogel electrode layer (SHEL), and a physical cross-linking layer (PCLL). Carbon nanotubes (CNTs), obtained by a chemical vapor deposition (CVD) method, were added into polydimethylsiloxane (PDMS) to produce the HDTL. Compared with pure PDMS, the short-circuit transferred charge (44 nC) and the open circuit voltage (132 V) are doubled for PDMS with 0.01 wt% CNTs. Glycerin, polydopamine particles (PDAP) andmore »graphene were added to poly (vinyl alcohol) (PVA) to prepare the self-healing hydrogel electrode layer. SHEL can physically self-heal in ~1 min when exposed to air. The self-healing efficiency reaches up to 98%. The PCLL is made of poly(methylhydrosiloxane) (PMHS) and PDMS. It forms a good physical bond between the hydrophilic hydrogel and hydrophobic PDMS layers. The electric output performance of the SH-TENG can reach 94% of the undamaged one in 1 min. The SH-TENG (6 × 6 cm2) exhibits good stability and superior electrical performance, enabling it to power 37 LEDs simultaneously.« less
    Free, publicly-accessible full text available May 26, 2022
  4. ; ; ; ; ; ; ; ( , Proceedings of USENIX Security Symposium)
    Accepted Manuscript Full Text Available
  5. ; ; ; ; ; ; ; ; ( , Scientific Reports)
    Abstract The manipulation of antiferromagnetic order in magnetoelectric Cr 2 O 3 using electric field has been of great interest due to its potential in low-power electronics. The substantial leakage and low dielectric breakdown observed in twinned Cr 2 O 3 thin films, however, hinders its development in energy efficient spintronics. To compensate, large film thicknesses (250 nm or greater) have been employed at the expense of device scalability. Recently, epitaxial V 2 O 3 thin film electrodes have been used to eliminate twin boundaries and significantly reduce the leakage of 300 nm thick single crystal films. Here we report the electricalmore »endurance and magnetic properties of thin (less than 100 nm) single crystal Cr 2 O 3 films on epitaxial V 2 O 3 buffered Al 2 O 3 (0001) single crystal substrates. The growth of Cr 2 O 3 on isostructural V 2 O 3 thin film electrodes helps eliminate the existence of twin domains in Cr 2 O 3 films, therefore significantly reducing leakage current and increasing dielectric breakdown. 60 nm thick Cr 2 O 3 films show bulk-like resistivity (~ 10 12 Ω cm) with a breakdown voltage in the range of 150–300 MV/m. Exchange bias measurements of 30 nm thick Cr 2 O 3 display a blocking temperature of ~ 285 K while room temperature optical second harmonic generation measurements possess the symmetry consistent with bulk magnetic order.« less
    Full Text Available 
  6. ; ; ; ; ( , The 26th SIGKDD Conference on Knowledge Discovery and Data Mining)
    Full Text Available 
  7. ; ; ; ; ; ( , The 29th USENIX Security Symposium)
    Accepted Manuscript Full Text Available
  8. ; ; ; ; ; ; ; ( , The 27th ACM Conference on Computer and Communications Security)
    Accepted Manuscript Full Text Available
  9. ; ; ; ( , European MPI Users' Group Meeting (EuroMPI '19))
    Full Text Available 
  10. ; ; ; ; ; ; ; ; ; ; et al ( , Physical Review Letters)
    Full Text Available