Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. This work systematically examines thermoelectric transport in a series of topological Dirac semimetal Cd3As2thin films grown by molecular beam epitaxy. Surprisingly, significantly enhanced Seebeck effect and anomalous Nernst effect are found at cryogenic temperatures when the Cd3As2layer is thin. In particular, a peak Seebeck coefficient of nearly 500 µV K−1and a corresponding thermoelectric power factor over 30 mW K−2 m−1are observed at 5 K in a 25‐nm‐thick sample. Combining angle‐dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modeling, and first‐principles simulation, the contributions from bulk and surface conducting channels are isolated and the unusual thermoelectric properties are attributed to the topological surface states. The analysis showcases the rich thermoelectric transport physics in quantum‐confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures.
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Abstract Free, publicly-accessible full text available July 1, 2025 -
Topological materials are promising candidates in fault-tolerant quantum information processing architectures, making it essential to understand the dephasing mechanisms in these materials. Here, we investigate gated, nanoscale mesas fabricated on thin films of cadmium arsenide (Cd3As2), a three-dimensional Dirac semimetal that can be tuned into different topological phases. We observe two independent types of conductance oscillations, one as a function of the applied magnetic field and the other as a function of the gate voltage. Varying the dimensions of the nanostructures allows the discrimination of a variety of scenarios for similar oscillations previously reported in the literature. We conclude that the conductance oscillations are not a signature of topological boundary states per se, but rather are universal conductance fluctuations. These results broadly inform future interpretations of electronic quantum interference in mesoscopic devices made from topological materials.