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This study investigates the electronic structure of the vanadium-based kagome metal YV6Sn6 using magnetoresistance (MR) and torque magnetometry. The MR exhibits a nearly linear, non-saturating behavior, increasing by up to 55% at 35 T but shows no evidence of Shubnikov–de Haas oscillations. In contrast, the torque signal, measured up to 41.5 T, reveals clear de Haas–van Alphen (dHvA) oscillations over a wide frequency range, from a low frequency of Fα ∼20 T to high frequencies between 8 and 10 kT. Angular and temperature-dependent dHvA measurements were performed to probe the Fermi surface parameters of YV6Sn6. The dHvA frequencies display weak angular dependence, and the effective mass, determined by fitting the temperature-dependent data to the Lifshitz–Kosevich formula, is 0.097 mo, where mo represents the free electron mass. To complement the experimental findings, we computed the electronic band structure and Fermi surface using density functional theory. The calculations reveal several notable features, including multiple Dirac points near the Fermi level, flatbands, and Van Hove singularities. Two bands cross the Fermi level, contributing to the Fermi surface, with theoretical frequencies matching well with the observed dHvA frequencies. These combined experimental and theoretical insights enhance our understanding of the electronic structure of YV6Sn6 and provide a valuable framework for studying other vanadium- and titanium-based kagome materials. 

When semiconducting transition metal dichalcogenide heterostructures are stacked, the twist angle and lattice mismatch lead to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0° or 60°, interesting characteristics and properties, such as modulations in the band edges, flat bands, and confinement, are predicted to occur. Here, we report scanning tunneling microscopy and spectroscopy measurements on the bandgaps and band modulations in MoSe2/WSe2 heterostructures with near 0° rotation (R-type) and near 60° rotation (H-type). We find a modulation of the bandgap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges.