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We report the results of thermodynamic measurements in external magnetic field of the cubic Ce-based cage compounds CeT₂Cd₂₀(T= Ni,Pd). Our analysis of the heat-capacity data shows that the Γ₇doublet is the ground state multiplet of the Ce³⁺ions. Consequently, for the Γ₇doublet it can be theoretically shown that the Ruderman–Kittel–Kasuya–Yosida interaction between the localized Ce moments mediated by the conduction electrons, must vanish at temperatures much lower than the energy separating the ground state doublet from the first excited Γ₈quartet. Our findings provide an insight as to why no long range order has been observed in these compounds down to temperatures in the milliKelvin range.

CeOs₄Sb₁₂, a member of the skutterudite family, has an unusual semimetallic low-temperature$\mathcal{L}$-phase that inhabits a wedge-like area of the fieldH—temperatureTphase diagram. We have conducted measurements of electrical transport and megahertz conductivity on CeOs₄Sb₁₂single crystals under pressures of up to 3 GPa and in high magnetic fields of up to 41 T to investigate the influence of pressure on the differentH–Tphase boundaries. While the high-temperature valence transition between the metallic$\mathcal{H}$-phase and the$\mathcal{L}$-phase is shifted to higherTby pressures of the order of 1 GPa, we observed only a marginal suppression of the$\mathcal{S}$-phase that is found below 1 K for pressures of up to 1.91 GPa. High-field quantum oscillations have been observed for pressures up to 3.0 GPa and the Fermi surface of the high-field side of the$\mathcal{H}$-phase is found to show a surprising decrease in size with increasing pressure, implying a change in electronic structure rather than a mere contraction of lattice parameters. We evaluate the field-dependence of the effective masses for different pressures and also reflect on the sample dependence of some of the properties of CeOs₄Sb₁₂which appears to be limitedmore »to the low-field region.

Previous high-resolution angle-resolved photoemission (ARPES) studies of URu₂Si₂have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (E_F) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states interact with other hole-band states that are generally absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a more globalk-space context for the presence of such states and their relation to the bulk Fermi surface (FS) topology using synchrotron-based wide-angle and photon energy-dependent ARPES mapping of the electronic structure using photon energies intermediate between the low-energy regime and the high-energy soft x-ray regime. Small-spot spatial dependence,f-resonant photoemission, Si 2pcore-levels, x-ray polarization, surface-dosing modification, and theoretical surface slab calculations are employed to assist identification of bulk versus surface state character of theE_F-crossing bands and their relation to specific U- or Si-terminations of the cleaved surface. The bulk FS topology is critically compared to density functional theory (DFT) and to dynamical mean field theory calculations. In addition to clarifying some aspects of the previously measured high symmetry Γ,ZandXpoints, incommensurate 0.6a* nested Fermi-edge states located alongZ–N–Zare found to be distinctlymore »different from the DFT FS prediction. The temperature evolution of these states aboveT_HO, combined with a more detailed theoretical investigation of this region, suggests a key role of theN-point in the hidden order transition.