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Single-photon avalanche diodes (SPADs) that are sensitive to photons in the Short-wave infrared and extended short-wave infrared (SWIR and eSWIR) spectra are important components for communication, ranging, and low-light level imaging. The high gain, low excess noise factor, and widely tunable bandgap of AlxIn1-xAsySb1-yavalanche photodiodes (APDs) make them a suitable candidate for these applications. In this work, we report single-photon-counting results for a separate absorption, charge, and multiplication (SACM) Geiger-mode SPAD within a gated-quenching circuit. The single-photon avalanche probabilities surpass 80% at 80 K, corresponding with single-photon detection efficiencies of 33% and 12% at 1.55 µm and 2 µm, respectively.
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Zheng, Jiyuan; Ahmed, Sheikh Z.; Yuan, Yuan; Jones, Andrew; Tan, Yaohua; Rockwell, Ann K.; March, Stephen D.; Bank, Seth R.; Ghosh, Avik W.; Campbell, Joe C. (, InfoMat)Abstract Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. imagemore » « less
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Yuan, Yuan; Zheng, Jiyuan; Rockwell, Ann K.; March, Stephen D.; Bank, Seth R.; Campbell, Joe C. (, IEEE Photonics Technology Letters)
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Walker, Emily S.; Muschinske, Sarah; Brennan, Christopher J.; Na, Seung Ryul; Trivedi, Tanuj; March, Stephen D.; Sun, Yukun; Yang, Tianhao; Yau, Alice; Jung, Daehwan; et al (, Physical Review Materials)
