A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/
- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources4
- Resource Type
-
00000040000
- More
- Availability
-
40
- Author / Contributor
- Filter by Author / Creator
-
-
McCartney, Martha R. (4)
-
Smith, David J. (4)
-
Chang, Cui-Zu (1)
-
Chen, Tingyong (1)
-
Das, Nabasindhu (1)
-
Deng, Haiming (1)
-
Fares, Chaker (1)
-
Forrester, Candice (1)
-
Gilankar, Advait (1)
-
Grundmann, Marius (1)
-
Islam, Ahmad Ehteshamul (1)
-
Jiang, Zilong (1)
-
Kalarickal, Nidhin Kurian (1)
-
Katta, Abishek (1)
-
Kneiß, Max (1)
-
Krusin-Elbaum, Lia (1)
-
Levy, Ido (1)
-
Liu, Chao-Xing (1)
-
Liu, Yawen (1)
-
Moodera, Jagadeesh S. (1)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Sahin. I. (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Abstract β -Ga2O3Schottky barrier diodes (SBDs) and NiO/β -Ga2O3heterojunction diodes (HJDs) is reported. The fabricated devices showed a lowR on,spof 6.2 mΩ cm2for SBDs and 6.8 mΩ cm2for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-classβ -Ga2O3diodes. -
Levy, Ido ; Forrester, Candice ; Deng, Haiming ; Roldan-Gutierrez, Manuel ; McCartney, Martha R. ; Smith, David J. ; Testelin, Christophe ; Krusin-Elbaum, Lia ; Tamargo, Maria C. ( , Crystal Growth & Design)
-
Tang, Chi ; Chang, Cui-Zu ; Zhao, Gejian ; Liu, Yawen ; Jiang, Zilong ; Liu, Chao-Xing ; McCartney, Martha R. ; Smith, David J. ; Chen, Tingyong ; Moodera, Jagadeesh S. ; et al ( , Science Advances)
-
Fares, Chaker ; Xian, Minghan ; Smith, David J. ; McCartney, Martha R. ; Kneiß, Max ; von Wenckstern, Holger ; Grundmann, Marius ; Tadjer, Marko ; Ren, Fan ; Pearton, S. J. ( , Journal of Applied Physics)