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Creators/Authors contains: "McCartney, Martha R."

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  1. Abstract

    A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3Schottky barrier diodes (SBDs) and NiO/β-Ga2O3heterojunction diodes (HJDs) is reported. The fabricated devices showed a lowRon,spof 6.2 mΩ cm2for SBDs and 6.8 mΩ cm2for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm2. The devices also showed low reverse leakage current (<1 mA cm−2) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-classβ-Ga2O3diodes.

     
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