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Creators/Authors contains: "Páez_Fajardo, Galo"

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  1. ; ; ; ; ; (, Advanced Materials Interfaces)
    Abstract Straining the vanadium dimers along the rutilec‐axis can be used to tune the metal‐to‐insulator transition (MIT) of VO2but has thus far been limited to TiO2substrates. In this work VO2/MgF2epitaxial films are grown via molecular beam epitaxy (MBE) to strain engineer the transition temperature (TMIT). First, growth parameters are optimized by varying the synthesis temperature of the MgF2(001) substrate (TS) using a combination of X‐ray diffraction techniques, temperature dependent transport, and soft X‐ray photoelectron spectroscopy. It is determined thatTSvalues greater than 350 °C induce Mg and F interdiffusion and ultimately the relaxation of the VO2layer. Using the optimized growth temperature, VO2/MgF2(101) and (110) films are then synthesized. The three film orientations display MITs with transition temperatures in the range of 15–60 °C through precise strain engineering. 
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