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Hight-Huf, Nicholas; Pagaduan, James Nicolas; Katsumata, Reika; Emrick, Todd; Barnes, Michael D. (, The Journal of Physical Chemistry Letters)
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Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitorsAsapu, Shiva; Pagaduan, James Nicolas; Zhuo, Ye; Moon, Taehwan; Midya, Rivu; Gao, Dawei; Lee, Jungmin; Wu, Qing; Barnell, Mark; Ganguli, Sabyasachi; et al (, Frontiers in Materials)In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2P r ), in-plane tensile stress was induced by tungsten electrodes under optimal RTA temperatures. We observed an increase in 2P r with RTA temperature, likely due to an increased proportion of the polar ferroelectric phase in HZO. The HZO capacitors annealed at 400°C did not exhibit any ferroelectric behavior, whereas the HZO capacitors annealed at 800°C became highly leaky and shorted for voltages above 1 V. On the other hand, annealing at 700 °C produced HZO capacitors with a record-high 2P r of ∼ 64 μ C cm −2 at a relatively high frequency of 111 kHz. These ferroelectric capacitors have also demonstrated impressive endurance and retention characteristics, which will greatly benefit neuromorphic computing applications.more » « less
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Hight-Huf, Nicholas; Nagar, Yehiel; Levi, Adi; Pagaduan, James Nicolas; Datar, Avdhoot; Katsumata, Reika; Emrick, Todd; Ramasubramaniam, Ashwin; Naveh, Doron; Barnes, Michael D. (, ACS Applied Materials & Interfaces)
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Pagaduan, James Nicolas; Hight-Huf, Nicholas; Datar, Avdhoot; Nagar, Yehiel; Barnes, Michael; Naveh, Doron; Ramasubramaniam, Ashwin; Katsumata, Reika; Emrick, Todd (, ACS Nano)null (Ed.)