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Abstract A highly conductive and transparent oxide/metal/oxide (OMO) multilayer transparent electrode is developed by flash lamp annealing (FLA). A transient thermal effect of FLA on the sandwich structure of the ultrathin Ag layer and zinc‐doped indium oxide (IZO) layer is systematically investigated. FLA enables IZO/Ag/IZO multilayer to maintain the continuous ultrathin Ag interlayer and improve the crystallinity of the IZO layers. This is due to a very short processing time, absorption of visible light by the Ag layer, heat transfer from the Ag layer to the IZO layer, and mechanical constraint of the Ag layer by neighbor IZO layers. This combination of continuous ultrathin Ag layer and highly crystalline IZO layer decreases light scattering in a visible range and allows the electron donation from the Ag layer of a high electron concentration to neighbor IZO layers of a high electron mobility. IZO/Ag/IZO multilayer film from an optimal FLA process achieves a very low sheet resistance of 4.1 Ω sq⁻¹and a high optical transmittance (90.1%) in the broadband range of 400–800 nm. A perovskite solar cell in the best IZO/Ag/IZO transparent electrode exhibits better current generation and higher fill factor than a device of FTO electrode. 

Recent manufacturing of perovskite solar cells (PSC) is moving beyond a spin coating technique. Among several new methods of the large‐area PSCs, inkjet printing (IJP) has emerged as a promising alternative to spin coating due to the high degree of control on printed film area and low material waste. In the IJP of PSCs, one important question is how to remove redundant excess solvent and facilitate the crystallization of the perovskite phase. Along with IJP, an antisolvent bathing is employed. This work reports how the IJP parameters and antisolvent bathing compositions affect the microstructure and initial efficiency of inkjet‐printed PSCs. The halide perovskite films are submerged in the antisolvent of different temperatures to observe the formation of an intermediate phase and the evolution of perovskite phase. By observing the phase evolution using X‐Ray diffraction, an optimized antisolvent bath duration is achieved for diethyl ether (DE) condition. An enhanced power conversion efficiency (PCE) and larger grain size with two sequential passes of inkjet‐deposited perovskite are also reported, and the dissolution of homogeneous nucleation sites as a mechanism for larger grains is proposed. Finally, with multipass IJP and cold antisolvent DE bathing, a champion device with 15.02% PCE is achieved.