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Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

https://doi.org/10.1126/sciadv.abg5860

Mundy, Julia A. ; Grosso, Bastien F. ; Heikes, Colin A. ; Ferenc Segedin, Dan ; Wang, Zhe ; Shao, Yu-Tsun ; Dai, Cheng ; Goodge, Berit H. ; Meier, Quintin N. ; Nelson, Christopher T. ; et al ( February 2022 , Science Advances)

Thin-film electrostatic engineering is used to uncover a hidden antiferroelectric phase.
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Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

https://doi.org/10.1038/s41598-020-58592-5

Taz, Humaira ; Prasad, Bhagwati ; Huang, Yen-Lin ; Chen, Zuhuang ; Hsu, Shang-Lin ; Xu, Ruijuan ; Thakare, Vishal ; Sakthivel, Tamil Selvan ; Liu, Chenze ; Hettick, Mark ; et al ( December 2020 , Scientific Reports)

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Ultralow Voltage Manipulation of Ferromagnetism

https://doi.org/10.1002/adma.202001943

Prasad, Bhagwati ; Huang, Yen‐Lin ; Chopdekar, Rajesh V. ; Chen, Zuhuang ; Steffes, James ; Das, Sujit ; Li, Qian ; Yang, Mengmeng ; Lin, Chia‐Ching ; Gosavi, Tanay ; et al ( July 2020 , Advanced Materials)
null (Ed.)
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Integrated Circuits Comprising Patterned Functional Liquids

https://doi.org/10.1002/adma.201802598

Prasad, Bhagwati ; Pfanzelt, Georg ; Fillis-Tsirakis, Evangelos ; Zachman, Michael J. ; Kourkoutis, Lena F. ; Mannhart, Jochen ( August 2018 , Advanced Materials)

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Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3

https://doi.org/10.1002/adma.202000508

Barrozo, Petrucio ; Småbråten, Didrik René ; Tang, Yun‐Long ; Prasad, Bhagwati ; Saremi, Sahar ; Ozgur, Rustem ; Thakare, Vishal ; Steinhardt, Rachel A. ; Holtz, Megan E. ; Stoica, Vladimir Alexandru ; et al ( April 2020 , Advanced Materials)

Abstract
Results of switching behavior of the improper ferroelectric LuFeO₃are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO₃. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.

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