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  1. Free, publicly-accessible full text available January 1, 2025
  2. Free, publicly-accessible full text available August 9, 2024
  3. Solvents enable growth of phase-pure two-dimensional perovskites without dissolving three-dimensional perovskite substrates. 
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  4. Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (∼234 V) as compared to GaN (∼168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

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  5. Abstract

    Piezoelectricity in low‐dimensional materials and metal–semiconductor junctions has attracted recent attention. Herein, a 2D in‐plane metal–semiconductor junction made of multilayer 2H and 1T′ phases of molybdenum(IV) telluride (MoTe2) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H–1T′ junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials.

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  6. Abstract

    Despite decades of research, metallic corrosion remains a long‐standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here a lightweight sulfur–selenium (S–Se) alloy is designed with high stiffness and ductility that can serve as an excellent corrosion‐resistant coating with protection efficiency of ≈99.9% for steel in a wide range of diverse environments. S–Se coated mild steel shows a corrosion rate that is 6–7 orders of magnitude lower than bare metal in abiotic (simulated seawater and sodium sulfate solution) and biotic (sulfate‐reducing bacterial medium) environments. The coating is strongly adhesive, mechanically robust, and demonstrates excellent damage/deformation recovery properties, which provide the added advantage of significantly reducing the probability of a defect being generated and sustained in the coating, thus improving its longevity. The high corrosion resistance of the alloy is attributed in diverse environments to its semicrystalline, nonporous, antimicrobial, and viscoelastic nature with superior mechanical performance, enabling it to successfully block a variety of diffusing species.

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