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Multichannel coupling in hybrid systems makes an attractive testbed not only because of the distinct advantages entailed by each constituent mode but also because the opportunity to leverage interference among the various excitation pathways. Here, via combined analytical calculation and experiment, we demonstrate that the phase of the magnetization precession at the interface of a coupled yttrium iron garnet (YIG)/permalloy (Py) bilayer is collectively controlled by the microwave photon field torque and the interlayer exchange torque, manifesting a coherent, dual-channel excitation scheme that effectively tunes the magneto-optical spectrum. The different torque contributions vary with frequency, external bias field, and type of interlayer coupling between YIG and Py, which further results in destructive or constructive interferences between the two excitation channels, and hence selective suppression or amplification of the hybridized magnon modes. 

The electric field manipulates the spin chirality and skyrmion motion direction in a magnetic heterostructure. 

Abstract Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin‐orbit torque (SOT) and manipulate the magnetization with their unique topological surface states (TSS) with ultrahigh efficiency. Here, efficient SOT switching of a hard MTI, V‐doped (Bi,Sb)₂Te₃(VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8 × 10⁵ A cm⁻², indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge‐state‐mediated to surface‐state‐mediated transport, thus enhancing the SOT effective field to (1.56 ± 0.12) × 10⁻⁶ T A⁻¹ cm²and the interfacial charge‐to‐spin conversion efficiency to 3.9 ± 0.3 nm⁻¹. The findings establish VBST as an extraordinary candidate for energy‐efficient magnetic memory devices.