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Nickel and aluminum ohmic contacts were formed on p-doped GeC and GeCSn epitaxial films with ∼1%C. When a 40 nm p-GeC contact layer was added to p-Ge, annealed contact resistivity (Rc) dropped by 87% to 9.3 × 10−7 Ω cm2 for Al but increased by 32% to 2.9 × 10−5 Ω cm2 for Ni. On the other hand, thick films of GeCSn, which showed lower active doping, had contact resistivities of 4.4 × 10−6 Ω cm2 for Al and 1.4 × 10−5 Ω cm2 for Ni. In general, Al contacts were better than Ni, regardless of anneal, and were further improved by adding carbon. Annealing reduced Rc for both Ni and Al contacts to GeCSn by 4×, 2× for Al on GeC, and 5 orders of magnitude for Ni on GeC. It is speculated that C forms bonds with Ni that inhibit diffusion of Ni into the Ge, thus preventing the formation of low-resistance nickel germanide. Adding C, either as bulk GeCSn or as GeC contact layers, seems to significantly reduce the contact resistivity for Al contacts when compared to bulk Ge of comparable doping.