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  1. Abstract Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr 2 Te 3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr 2 Te 3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr 2 Te 3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr 2 Te 3 thin films offers new opportunities for topological electronics. 
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    Free, publicly-accessible full text available December 1, 2024
  2. We report the synthesis of large-area, high-Ti-content, Mo 1−x Ti x S 2 alloy thin films in the 2H phase at temperature as low as 500 °C using a scalable two-step method of metal film deposition, followed by sulfurization in H 2 S. Film processing at higher temperature accelerates Ti segregation, film coarsening, and the formation of TiS 2 in the 1T phase. Crystal growth at higher temperature results in the formation of multiple binary sulfide phases, in agreement with the equilibrium phase diagram. Making highly metastable, smooth, and uniform single-phase alloy films, therefore, hinges on developing low-temperature processing. Our results are relevant to the development of technologies based on designer transition metal dichalcogenide alloys, including in photonic integrated circuits and gas sensing. 
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  3. Free, publicly-accessible full text available March 28, 2024
  4. Abstract

    The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 Å moiré pattern at the 2D/3D interface. This moiré period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. We show, via ab initio electronic structure calculations, that charge density is modulated according to the moiré period, illustrating the potential for (opto-)electronic moiré engineering at the 2D/3D interface. Our work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques.

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  6. Abstract

    The synthesis of large‐area TiS2thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H2S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because TiO bonds present a substantial kinetic and thermodynamic barrier to TiS2formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS2and related transition metal dichalcogenides—including metastable phases and alloys—into device technology.

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