Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/
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μ m, which is about 70 times better than existing literature. -
de Lima, Thomas Ferreira ; Tait, Alexander N. ; Saeidi, Hooman ; Nahmias, Mitchell A. ; Peng, Hsuan-Tung ; Abbaslou, Siamak ; Shastri, Bhavin J. ; Prucnal, Paul R. ( , IEEE Journal of Selected Topics in Quantum Electronics)
