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Creators/Authors contains: "Saha, Shantanu"

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  1. Abstract Two dimensional layered hexagonal boron nitride (h-BN) has recently emerged as a promising quantum material for quantum information science and engineering primarily due to its excellent chemo-mechanical stability and efficacy in hosting quantum point defects (QPDs). These QPDs potentially act as spin based quantum devices and systems which exhibit valuable quantum properties, making them highly sought after in quantum research. This mini-review focuses on the recent progress of neutron irradiated h-BN, the resulting QPDs, and how they function as spin-based quantum sensors. We also outline the key technical challenges associated with the development of high performance quantum devices as well as the improvements needed to enhance quantum properties in such neutron irradiated h-BN. Our review is expected to accelerate further research on neutron irradiation of h-BN for quantum applications and drive interest in the deterministic creation of spin-based quantum emitters. 
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  2. Intrinsic defects and their concentrations in hexagonal boron nitride (h‐BN) play a key role in single‐photon emission. In this study, the optical properties of large‐area multilayer h‐BN‐on‐sapphire grown by metal‐organic chemical vapor deposition are explored. Based on the detailed spectroscopic characterization using both cathodoluminescence (CL) and photoluminescence (PL) measurements, the material is devoid of random single‐point defects instead of a few clustered complex defects. The emission spectra of the measurements confirm a record‐low‐defect concentration of ≈104 cm−2. Post‐annealing, no significant changes are observed in the measured spectra and the defect concentrations remain unaltered. Through CL and PL spectroscopy, an optically active boron vacancy spin defect is identified and a novel complex defect combination arising from carbon impurities is revealed. This complex defect, previously unreported, signifies a unique aspect of the material. In these findings, the understanding of defect‐induced optical properties in h‐BN films is contributed, providing insights for potential applications in quantum information science. 
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