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The anomalous Hall, Nernst, and thermal Hall coefficients of the itinerant ferromagnet Fe3−xGeTe2 display anomalies upon cooling that are consistent with a topological transition that could induce deviations with respect to the Wiedemann–Franz (WF) law. This law has not yet been validated for the anomalous transport variables, with recent experimental studies yielding material-dependent results. Nevertheless, the anomalous Hall and thermal Hall coefficients of Fe3−xGeTe2 are found, within our experimental accuracy, to satisfy the WF law for magnetic fields μ0H applied along its c axis. Remarkably, large anomalous transport is also observed for μ0H||a axis with the field aligned along the gradient of the chemical potential generated by thermal gradients or electrical currents, a configuration that should not lead to their observation. These anomalous planar quantities are found to not scale with the component of the planar magnetization (M||), showing instead a sharp decrease beyond μ0H||= 4 T or the field required to align the magnetic moments along μ0H||. We argue that chiral spin structures associated with Bloch domain walls lead to a field-dependent spin chirality that produces a novel type of topological transport in the absence of interaction between the magnetic field and electrical or thermal currents. Locally chiral spin structures are captured by our Monte Carlo simulations incorporating small Dzyaloshinskii–Moriya and biquadratic exchange interactions. These observations reveal not only a new way to detect and expose topological excitations, but also a new configuration for heat conversion that expands the current technological horizon for thermoelectric energy applications. 

Abstract 2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal‐oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO₂) and silicon nitride (SiN_x). Here, a seeded growth technique for crystallizing CrTe₂films on amorphous SiN_x/Si and SiO₂/Si substrates with a low thermal budget is presented. This fabrication process optimizes large‐scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo‐oersted, attributed to weak intergranular exchange coupling. Field‐driven Néel‐type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe₂devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single‐crystalline counterparts. Current‐assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 ×  10⁷ℏ/2e  Ω⁻¹  m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large‐scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.