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We report microwave spectroscopy of Josephson junction chains made from an epitaxial Al/InAs heterostructure. The chains exhibit superinductance, with characteristic wave impedance exceeding RQ=ℏ/(2e)2. The planar nature of the junctions results in a large plasma frequency, with no measurable dispersion attributable to the single-junction plasma frequency in the measurement range. Internal quality factors decrease sharply with frequency, which we describe with a simple loss model. The possibility of a loss mechanism intrinsic to the superconductor–semiconductor junction is considered. 

Arrays of Josephson junctions can be tuned through anomalous metallic, quantum-critical, and insulating regimes. We introduce an alternative experimental probe, capturing microwave radiation across all three regimes, using a two-dimensional array of superconductor-semiconductor hybrid Josephson junctions as a model system. Our approach allows calibration of the sample’s circuit parameters and provides isolation from measurement back-action effects. We measure the radiation temperature of the anomalous metal and find that it is hotter than both the quantum-critical and insulating regimes. We further show that the anomalous metallic regime is more susceptible to additional heating than other regimes, explaining its emergence in otherwise thermalized systems. Turning to the quantum-critical regime, we discover nonlinear scaling of radiative noise with applied bias, consistent with theoretical predictions of universal nonequilibrium behavior at quantum-critical points. 

A planar Josephson junction is a versatile platform to realize topological superconductivity over a large parameter space and host Majorana bound states. With a change in the Zeeman field, this system undergoes a transition from trivial to topological superconductivity accompanied by a jump in the superconducting phase difference between the two superconductors. A standard model of these Josephson junctions, which can be fabricated to have a nearly perfect interfacial transparency, predicts a simple universal behavior. In that model, at the same value of Zeeman field for the topological transition, there is a π phase jump and a minimum in the critical superconducting current, while applying a controllable phase difference yields a diamond-shaped topological region as a function of that phase difference and a Zeeman field. In contrast, even for a perfect interfacial transparency, we find a much richer and nonuniversal behavior as the width of the superconductor is varied or the Dresselhaus spin–orbit coupling is considered. The Zeeman field for the phase jump, not necessarily π, is different from the value for the minimum critical current, while there is a strong deviation from the diamond-like topological region. These Josephson junctions show a striking example of a nonreciprocal transport and superconducting diode effect, revealing the importance of our findings not only for topological superconductivity and fault-tolerant quantum computing but also for superconducting spintronics. 

We describe the generation of entangling gates on superconductor-semiconductor hybrid qubits by ac voltage modulation of the Josephson energy. Our numerical simulations demonstrate that the unitary error can be below 10−5 in a variety of 75-ns-long two-qubit gates (CZ, 𝑖⁢SWAP, and √𝑖⁢SWAP) implemented using parametric resonance. We analyze the conditional 𝑍⁢𝑍 phase and demonstrate that the CZ gate needs no further phase-correction steps, while the 𝑍⁢𝑍 phase error in swap-type gates can be compensated by choosing pulse parameters. With decoherence considered, we estimate that qubit relaxation time needs to exceed 70μ⁢s to achieve the 99.9% fidelity threshold. 

Developing alternative material platforms for use in superconductor–semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta the superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400 °C, the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3–7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta5Ge3 and TaGe2 binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a TC∼1.8−2 K and HC⊥∼1.88 T, HC∥∼5.1 T. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms.