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Newly discovered silicon nitride quantum emitters hold great promise for industrial-scale quantum photonic applications. We assess the performance of intrinsic room-temperature SiN single-photon emitters for quantum key distribution, showcasing their exceptional brightness and single-photon purity. 

We demonstrate an industrially scalable fabrication process for the integration of SiN/SiO₂single photon emitters into on-chip nanophotonic structures with sub-diffraction limited placement accuracy. 

Layered metal-halide perovskites, or two-dimensional perovskites, can be synthesized in solution, and their optical and electronic properties can be tuned by changing their composition. We report a molecular templating method that restricted crystal growth along all crystallographic directions except for [110] and promoted one-dimensional growth. Our approach is widely applicable to synthesize a range of high-quality layered perovskite nanowires with large aspect ratios and tunable organic-inorganic chemical compositions. These nanowires form exceptionally well-defined and flexible cavities that exhibited a wide range of unusual optical properties beyond those of conventional perovskite nanowires. We observed anisotropic emission polarization, low-loss waveguiding (below 3 decibels per millimeter), and efficient low-threshold light amplification (below 20 microjoules per square centimeter). 

We report on the generation of single-photon emitters in aluminum nitride films through Zr-ion implantation, which was predicted to form optically addressable spin defects. We studied implantation conditions, post-implantation procedures, and properties of resulting emitters. 

Multilayer films with continuously varying indices for each layer have attracted great deal of attention due to their superior optical, mechanical, and thermal properties. However, difficulties in fabrication have limited their application and study in scientific literature compared to multilayer films with fixed index layers. In this work we propose a neural network based inverse design technique enabled by a differentiable analytical solver for realistic design and fabrication of single material variable-index multilayer films. This approach generates multilayer films with excellent performance under ideal conditions. We furthermore address the issue of how to translate these ideal designs into practical useful devices which will naturally suffer from growth imperfections. By integrating simulated systematic and random errors just as a deposition tool would into the optimization process, we demonstrated that the same neural network that produced the ideal device can be retrained to produce designs compensating for systematic deposition errors. Furthermore, the proposed approach corrects for systematic errors even in the presence of random fabrication imperfections. The results outlined in this paper provide a practical and experimentally viable approach for the design of single material multilayer film stacks for an extremely wide variety of practical applications with high performance. 

We create intrinsic quantum emitters in silicon nitride, study their structure and temperature-dependent optical properties, and demonstrate monolithic integration with photonic waveguides to evaluate the potential of these single-photon sources for quantum information applications. 

We report the first demonstration of single silicon vacancy center creation in 20 nm nanodiamonds using silicon ion implantation combined with thermal annealing. Room-temperature single photon emission with linewidth below 10 nm is observed.