Search for: All records

Phase-pure polycrystalline Ba4RuMn2O10 was prepared and determined to adopt the noncentrosymmetric polar crystal structure (space group Cmc21) based on results of second harmonic generation, convergent beam electron diffraction, and Rietveld refinements using powder neutron diffraction data. The crystal structure features zigzag chains of corner-shared trimers, which contain three distorted face-sharing octahedra. The three metal sites in the trimers are occupied by disordered Ru/Mn with three different ratios: Ru1:Mn1 = 0.202(8):0.798(8), Ru2:Mn2 = 0.27(1):0.73(1), and Ru3:Mn3 = 0.40(1):0.60(1), successfully lowering the symmetry and inducing the polar crystal structure from the centrosymmetric parent compounds Ba4T3O10 (T = Mn, Ru; space group Cmca). The valence state of Ru/Mn is confirmed to be +4 according to X-ray absorption near-edge spectroscopy. Ba4RuMn2O10 is a narrow bandgap (∼0.6 eV) semiconductor exhibiting spin-glass behavior with strong magnetic frustration and antiferromagnetic interactions. 

Polycrystalline IrGe4 was synthesized by annealing elements at 800 °C for 240 h, and the composition was confirmed by energy-dispersive X-ray spectroscopy. IrGe4 adopts a chiral crystal structure (space group P3121) instead of a polar crystal structure (P31), which was corroborated by the convergent-beam electron diffraction and Rietveld refinements using synchrotron powder X-ray diffraction data. The crystal structure features layers of IrGe8 polyhedra along the b axis, and the layers are connected by edge- and corner-sharing. Each layer consists of corner-shared [Ir3Ge20] trimers, which are formed by three IrGe8 polyhedra connected by edge-sharing. Temperature-dependent resistivity indicates metallic behavior. The magnetoresistance increases with increasing applied magnetic field, and the nonsaturating magnetoresistance reaches 11.5% at 9 T and 10 K. The Hall resistivity suggests that holes are the majority carrier type, with a carrier concentration of 4.02 × 1021 cm–3 at 300 K. Electronic band structures calculated by density functional theory reveal a Weyl point with a chiral charge of +3 above the Fermi level. 

FeAs 2−x Se x ( x = 0.30–1.0) samples were synthesized as phase pure powders by conventional solid-state techniques and as single crystals ( x = 0.50) from chemical vapor transport. The composition of the crystals was determined to be Fe 1.025(3) As 1.55(3) Se 0.42(3) , crystallizing in the marcasite structure type, Pnnm space group. FeAs 2−x Se x (0 < x < 1) was found to undergo a marcasite-to-arsenopyrite ( P 2 1 / c space group) structural phase transition at x ∼ 0.65. The structures are similar, with the marcasite structure best described as a solid solution of As/Se, whereas the arsenopyrite has ordered anion sites. Magnetic susceptibility and thermoelectric property measurements from 300–2 K were performed on single crystals, FeAs 1.50 Se 0.50 . Paramagnetic behavior is observed from 300 to 17 K and a Seebeck coefficient of −33 μV K −1 , an electrical resistivity of 4.07 mΩ cm, and a very low κ l of 0.22 W m −1 K −1 at 300 K are observed. In order to determine the impact of the structural transition on the high-temperature thermoelectric properties, polycrystalline FeAs 2−x Se x ( x = 0.30, 0.75, 0.85, 1.0) samples were consolidated into dense pellets for measurements of thermoelectric properties. The x = 0.85 sample shows the best thermoelectric performance. The electronic structure of FeAsSe was calculated with DFT and transport properties were approximately modeled above 500 K. 

Correction for ‘Measured and simulated thermoelectric properties of FeAs 2−x Se x ( x = 0.30–1.0): from marcasite to arsenopyrite structure’ by Christopher J. Perez et al. , Mater. Adv. , 2020, 1 , 1390–1398, DOI: 10.1039/D0MA00371A.