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Atomic-Resolution Structure Imaging of Misfit Dislocations at Heterovalent II–VI/III–V Interfaces

https://doi.org/10.1021/acsaelm.1c00139

McKeon, Brandon S. ; Liu, Xinyu ; Furdyna, Jacek K. ; Smith, David J. ( June 2021 , ACS Applied Electronic Materials)

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Unraveling the structural and electronic properties of strained PbSe on GaAs

https://doi.org/10.1016/j.jcrysgro.2021.126235

Liu, X. ; Wang, J. ; Riney, L. ; Bac, S.K. ; Smith, David J. ; McCartney, M.R. ; Khan, I. ; Hoffman, A.J. ; Dobrowolska, M. ; Furdyna, J.K. ; et al ( September 2021 , Journal of Crystal Growth)

Free, publicly-accessible full text available September 1, 2022
Measuring Edge Sparsity on Large Social Networks

Smith, David J ; Thai, My T. ( July 2020 , INTERNATIONAL CONFERENCE ON WEB AND SOCIAL MEDIA)

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Annealing Effects on the Band Alignment of ALD SiO ₂ on (In _x Ga _1−x ) ₂ O ₃ for x = 0.25–0.74

https://doi.org/10.1149/2162-8777/ab8364

Fares, Chaker ; Xian, Minghan ; Smith, David J. ; McCartney, M. R. ; Kneiß, Max ; von Wenckstern, Holger ; Grundmann, Marius ; Tadjer, Marko ; Ren, Fan ; Pearton, S. J. ( April 2020 , ECS Journal of Solid State Science and Technology)

The band alignment of Atomic Layer Deposited SiO₂on (In_xGa_1−x)₂O₃at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In_0.25Ga_0.75)₂O₃, −0.45 eV for (In_0.42Ga_0.58)₂O₃, −0.40 eV for (In_0.60Ga_0.40)₂O₃, and −0.35 eV (In_0.74Ga_0.26)₂O₃for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable,more »
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Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy

https://doi.org/10.1038/s41598-019-39821-y

Claro, Marcel S. ; Levy, Ido ; Gangopadhyay, Abhinandan ; Smith, David J. ; Tamargo, Maria C. ( March 2019 , Scientific Reports)

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Above 400-K robust perpendicular ferromagnetic phase in a topological insulator

https://doi.org/10.1126/sciadv.1700307

Tang, Chi ; Chang, Cui-Zu ; Zhao, Gejian ; Liu, Yawen ; Jiang, Zilong ; Liu, Chao-Xing ; McCartney, Martha R. ; Smith, David J. ; Chen, Tingyong ; Moodera, Jagadeesh S. ; et al ( June 2017 , Science Advances)

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Investigation of polycrystalline Ga _x In _1 − x P for potential use as a solar cell absorber with tunable bandgap

https://doi.org/10.1063/1.5125676

Chikhalkar, Abhinav ; Gangopadhyay, Abhinandan ; Liu, Hanxiao ; Zhang, Chaomin ; Ponce, Fernando A. ; Smith, David J. ; Honsberg, Christiana ; King, Richard R. ( February 2020 , Journal of Applied Physics)

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Changes in band alignment during annealing at 600 °C of ALD Al ₂ O ₃ on (In _x Ga _1 − x ) ₂ O ₃ for x = 0.25–0.74

https://doi.org/10.1063/5.0002875

Fares, Chaker ; Xian, Minghan ; Smith, David J. ; McCartney, Martha R. ; Kneiß, Max ; von Wenckstern, Holger ; Grundmann, Marius ; Tadjer, Marko ; Ren, Fan ; Pearton, S. J. ( March 2020 , Journal of Applied Physics)

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Oxygen vacancy-mediated room-temperature ferromagnetism in insulating cobalt-substituted SrTiO $_{3}$ epitaxially integrated with silicon

https://doi.org/10.1103/PhysRevB.87.144422

Posadas, Agham B. ; Mitra, Chandrima ; Lin, Chungwei ; Dhamdhere, Ajit ; Smith, David J. ; Tsoi, Maxim ; Demkov, Alexander A. ( April 2013 , Physical Review B)

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Substrate-independent analysis of microcrystalline silicon thin films using UV Raman spectroscopy: Substrate-independent analysis of µc-Si thin films

https://doi.org/10.1002/pssb.201700204

Carpenter, III, Joe V. ; Bailly, Mark ; Boley, Allison ; Shi, Jianwei ; Minjares, Michael ; Smith, David J. ; Bowden, Stuart ; Holman, Zachary C. ( September 2017 , physica status solidi (b))

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