Search for: All records

Owing to their ability for fast switching and the large property contrast between the crystalline and amorphous states that permits multi-level data storage, in-memory computing and neuromorphic computing, the investigation of phase change materials (PCMs) remains a highly active field of research. Yet, the continuous increase in electrical resistance (called drift) observed in the amorphous phase has so far hindered the commercial implementation of multi-level data storage. It was recently shown that the resistance drift is caused by aging-induced structural relaxation of the glassy phase, which is accompanied by a simultaneous decrease in enthalpy and fictive temperature. This implies that resistance is related to enthalpy relaxation. While the resistance is known to drift even at room temperature and below, evidence for enthalpy relaxation at room temperature in amorphous PCMs is still missing. Here, we monitor changes in enthalpy induced by long-term room-temperature aging in a series of PCMs. Our results demonstrate the simultaneity of resistance drift and enthalpy relaxation at room temperature, and thus provide further insights into the mechanism of resistance drift and its possible remediation. 

Abstract Disentangling nucleation and growth in materials that crystallize on the nanosecond time scale is experimentally quite challenging since the relevant processes also take place on very small, i.e., sub‐micrometer length scales. Phase change materials are bad glass formers, which often crystallize rapidly. Here systematic changes in crystallization kinetics are shown in pseudo‐binary compounds of GeTe and Sb₂Te₃and related solids subjected to short laser pulses. Upon systematic changes in stoichiometry, the speed of crystallization changes by three orders of magnitude concomitantly with pronounced changes in stochasticity. Resolving individual grains with electron backscatter diffraction (EBSD) permits to disentangle of the process of nucleation and growth. From these experiments, supported by multiphysics simulations of crystallization, it can be concluded that high crystallization speeds with small stochasticity characterize phase change materials with fast nucleation, while compounds that nucleate slowly crystallize much more stochastically.