skip to main content


Search for: All records

Creators/Authors contains: "Stern, Richard A"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract

    Characterizing compositional heterogeneity in Earth’s lower mantle is critical to understanding its dynamics. Three low-nitrogen diamonds from Koffiefontein (South Africa), containing inclusion assemblages of ferropericlase ± orthopyroxene ± magnesite, constrain diamond formation in an Mg-rich lower-mantle environment. Ferropericlase inclusions have Mg# 82.7–88.5 and orthopyroxene inclusions (retrogressed bridgmanite) have Mg# 95.0–95.1 and mantle-like δ18O of +5.6‰ ± 0.2‰. Magnesite included in one diamond implicates carbonated fluids in diamond formation. High Mg# and low Ca, Al, and Na of the assemblage indicate a melt-depleted meta-harzburgitic environment, in contrast to more fertile compositions expected for primitive lower mantle. Extremely low Ca in orthopyroxene inclusions may reflect a combination of melt depletion and low equilibration temperatures at the time of trapping. Inclusion compositions implicate subducted oceanic slab meta-harzburgite as the host for diamond growth. Mantle-like δ18O of the orthopyroxene inclusions indicates unaltered oceanic lithosphere. Similar melt-depleted characteristics in lower-mantle inclusion assemblages worldwide support that meta-harzburgite is the dominant host of lower-mantle diamonds.

     
    more » « less
  2. Abstract The origin of the eclogites that reside in cratonic mantle roots has long been debated. In the classic Roberts Victor kimberlite locality in South Africa, the strongly contrasting textural and geochemical features of two types of eclogites have led to different genetic models. We studied a new suite of 63 eclogite xenoliths from the former Roberts Victor Mine. In addition to major- and trace-element compositions for all new samples, we determined 18O/16O for garnet from 34eclogites. Based on geochemical and textural characteristics we identify a large suite of Type I eclogites (n = 53) consistent with previous interpretations that these rocks originate from metamorphosed basaltic-picritic lavas or gabbroic cumulates from oceanic crust, crystallised from melts of depleted mid-ocean ridge basalt (MORB) mantle. We identify a smaller set of Type II eclogites (n = 10) based on geochemical and textural similarity to eclogites in published literature. We infer their range to very low δ18O values combined with their varied, often very low zirconium-hafnium (Zr-Hf) ratios and light rare earth element-depleted nature to indicate a protolith origin via low-pressure clinopyroxene-bearing oceanic cumulates formed from melts that were more depleted in incompatible elements than N-MORB. These compositions are indicative of derivation from a residual mantle source that experienced preferential extraction of incompatible elements and fractionation of Zr/Hf during previous melting. 
    more » « less
  3. Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021cm−3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

     
    more » « less