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  1. The structure and optical characteristics of thin (∼30 nm) wurtzite AlInN films grown pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al1−xInxN layers are grown by metalorganic chemical vapor deposition, resulting in films with varying In content from x = 0.142 to 0.225. They are measured using atomic force microscopy, x-ray diffraction, reciprocal space mapping, and spectroscopic ellipsometry (SE). The pseudomorphic AlInN layers provide a set where optical properties can be determined without additional variability caused by lattice relaxation, a crucial need for designing devices. They have smooth surfaces (rms < 0.29 nm) with minimum pit areas when the In content is near lattice-matched to GaN. As expected, SE shows that the refractive index increases and the bandgap energy decreases with increased In-content. Plots of bandgap energy vs In content are fitted with a single bowing parameter of 3.19 eV when using bandgap energies for AlN and InN pseudomorphic to GaN, which is lower than previous measurements and closer to theoretical predictions. 
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  2. Abstract

    Pure molybdenum disulfide (MoS2) solid lubricant coatings could attain densities comparable to doped films (and the associated benefits to wear rate and environmental stability) through manipulation of the microstructure via deposition parameters. Unfortunately, pure films can exhibit highly variable microstructures and mechanical properties due to processes that are not controlled during deposition (i.e., batch-to-batch variation). This work focuses on developing a relationship between density, hardness, friction, and wear for pure sputtered MoS2coatings. Results show that dense films (ρ = 4.5 g/cm3) exhibit a 100 × lower wear rate compared to porous coatings (ρ = 3.04–3.55 g/cm3). The tribological performance of high density pure MoS2coatings is shown to surpass that of established composite coatings, achieving a wear rate 2 × (k = 5.74 × 10–8mm3/Nm) lower than composite MoS2/Sb2O3/Au in inert environments.

     
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  3. null (Ed.)