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A search is performed for dark matter particles produced in association with a resonantly produced pair of b-quarks with 30 < mbb < 150 GeV using 140 fb−1 of proton-proton collisions at a center-of-mass energy of 13 TeV recorded by the ATLAS detector at the LHC. This signature is expected in extensions of the standard model predicting the production of dark matter particles, in particular those containing a dark Higgs boson s that decays into bb¯. The highly boosted s → bb¯ topology is reconstructed using jet reclustering and a new identification algorithm. This search places stringent constraints across regions of the dark Higgs model parameter space that satisfy the observed relic density, excluding dark Higgs bosons with masses between 30 and 150 GeV in benchmark scenarios with Z0 mediator masses up to 4.8 TeV at 95% confidence level. 

A combination of searches for singly and doubly charged Higgs bosons, 𝐻± and 𝐻±±, produced via vector-boson fusion is performed using 140 fb−1 of proton–proton collisions at a centre-of-mass energy of 13 TeV, collected with the ATLAS detector during Run 2 of the Large Hadron Collider. Searches targeting decays to massive vector bosons in leptonic final states (electrons or muons) are considered. New constraints are reported on the production cross section times branching fraction for charged Higgs boson masses between 200 GeV and 3000 GeV. The results are interpreted in the context of the Georgi-Machacek model for which the most stringent constraints to date are set for the masses considered in the combination. 

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B- site cations can be manipulated to control the physical and electronic structure of semiconductor – complex oxide heterostructures. Two prototypical heterostructures, Ba1-xSrxTiO3/Ge and SrZrxTi1-xO3/Ge, will be discussed. In the case of Ba1-xSrxTiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrxTi1-xO3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e. band-gap engineering, provide a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities. 

This paper presents a search for exotic decays of the Higgs boson into a pair of new pseudoscalar particles, H → aa, where one pseudoscalar decays into a b-quark pair and the other decays into a τ-lepton pair, in the mass range 12 ≤ ma ≤ 60 GeV. The analysis uses pp collision data at \sqrt{s} = 13 TeV collected with the ATLAS detector at the LHC, corresponding to an integrated luminosity of 140 fb−1. No significant excess above the Standard Model (SM) prediction is observed. Assuming the SM Higgs boson production cross section, the search sets upper limits at 95% confidence level on the branching ratio of Higgs bosons decaying into BR (H → aa → bb\tau\tau), between 2.2% and 3.9% depending on the pseudoscalar mass. 

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.