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  1. Free, publicly-accessible full text available September 1, 2024
  2. null (Ed.)
  3. Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B- site cations can be manipulated to control the physical and electronic structure of semiconductor – complex oxide heterostructures. Two prototypical heterostructures, Ba1-xSrxTiO3/Ge and SrZrxTi1-xO3/Ge, will be discussed. In the case of Ba1-xSrxTiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrxTi1-xO3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e. band-gap engineering, provide a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities. 
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  4. Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities. 
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  5. Free, publicly-accessible full text available August 1, 2024
  6. Free, publicly-accessible full text available July 1, 2024
  7. Abstract A study of the charge conjugation and parity ( $$\textit{CP}$$ CP ) properties of the interaction between the Higgs boson and $$\tau $$ τ -leptons is presented. The study is based on a measurement of $$\textit{CP}$$ CP -sensitive angular observables defined by the visible decay products of $$\tau $$ τ -leptons produced in Higgs boson decays. The analysis uses 139 fb $$^{-1}$$ - 1 of proton–proton collision data recorded at a centre-of-mass energy of $$\sqrt{s}= 13$$ s = 13  TeV with the ATLAS detector at the Large Hadron Collider. Contributions from $$\textit{CP}$$ CP -violating interactions between the Higgs boson and $$\tau $$ τ -leptons are described by a single mixing angle parameter $$\phi _{\tau }$$ ϕ τ in the generalised Yukawa interaction. Without constraining the $$H\rightarrow \tau \tau $$ H → τ τ signal strength to its expected value under the Standard Model hypothesis, the mixing angle $$\phi _{\tau }$$ ϕ τ is measured to be $$9^{\circ } \pm 16^{\circ }$$ 9 ∘ ± 16 ∘ , with an expected value of $$0^{\circ } \pm 28^{\circ }$$ 0 ∘ ± 28 ∘ at the 68% confidence level. The pure $$\textit{CP}$$ CP -odd hypothesis is disfavoured at a level of 3.4 standard deviations. The results are compatible with the predictions for the Higgs boson in the Standard Model. 
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    Free, publicly-accessible full text available July 1, 2024