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Jiang, Yuxuan ; Ermolaev, Maksim ; Kipshidze, Gela ; Moon, Seongphill ; Ozerov, Mykhaylo ; Smirnov, Dmitry ; Jiang, Zhigang ; Suchalkin, Sergey ( , Nature Communications)
Abstract Realizing a large Landé
g -factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value ofg ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that theg -factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route towardg -factor engineering in semiconductor structures. -
Suchalkin, Sergey ; Ermolaev, Maksim ; Valla, Tonica ; Kipshidze, Gela ; Smirnov, Dmitry ; Moon, Seongphill ; Ozerov, Mykhaylo ; Jiang, Zhigang ; Jiang, Yuxuan ; Svensson, Stefan P. ; et al ( , Applied Physics Letters)