skip to main content

Search for: All records

Creators/Authors contains: "Swisher, Sarah L."

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract Objective: Flexible Electrocorticography (ECoG) electrode arrays that conform to the cortical surface and record surface field potentials from multiple brain regions provide unique insights into how computations occurring in distributed brain regions mediate behavior. Specialized microfabrication methods are required to produce flexible ECoG devices with high-density electrode arrays. However, these fabrication methods are challenging for scientists without access to cleanroom fabrication equipment. Results: Here we present a fully desktop fabricated flexible graphene ECoG array. First, we synthesized a stable, conductive ink via liquid exfoliation of Graphene in Cyrene. Next, we established a stencil-printing process for patterning the graphene ink via laser-cut stencils on flexible polyimide substrates. Benchtop tests indicate that the graphene electrodes have good conductivity of ∼1.1 × 10 3 S cm −1 , flexibility to maintain their electrical connection under static bending, and electrochemical stability in a 15 d accelerated corrosion test. Chronically implanted graphene ECoG devices remain fully functional for up to 180 d, with average in vivo impedances of 24.72 ± 95.23 kΩ at 1 kHz. The ECoG device can measure spontaneous surface field potentials from mice under awake and anesthetized states and sensory stimulus-evoked responses. Significance: The stencil-printing fabrication process can be used to create Graphene ECoG devices with customized electrode layouts within 24 h using commonly available laboratory equipment. 
    more » « less
    Free, publicly-accessible full text available January 18, 2024
  2. Abstract

    Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing the plastic substrate from a carrier without damaging the electronics remains challenging. Here we utilize a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 µs pulse of broadband light from flashlamps to lift-off functional thin films from glass carrier substrates coated with a light absorber layer (LAL). Modeling indicates that the polymer/LAL interface reaches above 800 °C during PLO, but the top surface of the PI remains below 120 °C. An array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and photonically lifted off from the glass carrier. The TFT mobility was unchanged by PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while flexed.

    more » « less
    more » « less
  4. Abstract

    In metal‐oxide thin‐film transistors (TFTs), high‐kgate dielectrics often yield a higher electron mobility than SiO2. However, investigations regarding the mechanism of this high‐k“mobility boost” are relatively scarce. To explore this phenomenon, solution‐processed In2O3TFTs are fabricated using eight different gate dielectrics (SiO2, Al2O3, ZrO2, HfO2, and bilayer SiO2/high‐kstructures). With these structures, the total gate capacitance can be varied independently from the semiconductor–dielectric interface to study this mobility enhancement. It is shown that the mobility enhancement is a combination of the effects of areal gate capacitance and interface quality for disordered oxide semiconductor devices. The ZrO2‐gated TFTs achieve the highest mobility by inducing more accumulation charge with higher gate capacitance. Surprisingly, however, when the gate capacitance is held constant, no mobility enhancement is observed with the high‐kgate dielectrics compared to SiO2.

    more » « less
  5. We report a synthesis procedure for dodecanethiol capped wurtzite ZnO nanocrystals with an average diameter of 4 nm that are monodisperse, highly soluble, and shelf-stable for many months. Compared to previous ZnO ink recipes, we demonstrate improved particle solubility and excellent ink stability, resulting in ZnO nanocrystal inks that are optimized for printed electronics applications. The ZnO nanocrystal solution exhibits an absorption peak at 341 nm (3.63 eV), which represents a blue-shift of approximately 0.3 eV from the bulk ZnO bandgap (∼3.3 eV). This blue shift is consistent with previously reported models for an increased bandgap due to quantum confinement. We used variable-angle spectroscopic ellipsometry (VASE) to determine the optical properties of solution-processed thin films of ZnO nanocrystals, which provides valuable insight into the changes in film composition and morphology that occur during thermal annealing treatments ranging from 150–300 °C. The ZnO nanocrystals maintain their quantum confinement when deposited into a thin film, and the degree of quantum confinement is gradually reduced as the thermal annealing temperature increases. Using infrared absorption measurements (FTIR) and X-ray photoelectron spectroscopy (XPS), we show that the dodecanethiol ligands are removed from the ZnO films during annealing, resulting in a high-purity semiconductor film with very low carbon contamination. Furthermore, we show that annealing at 300 °C results in complete ligand removal with only a slight increase in grain size. Thin-film transistors (TFT) using ZnO nanocrystals as the channel material annealed at 300 °C show moderate mobility (∼0.002 cm 2 V −1 s −1 ) and good on/off ratio >10 4 . These results demonstrate the distinct advantages of colloidal nanocrystals for printed electronics applications: the composition and morphology of the solution-processed film can be carefully tuned by controlling the size and surface coating of the nanocrystals in the ink. 
    more » « less