An efficient photovoltaic power converter is a critical element in laser power beaming systems for maximizing the end-to-end power transfer efficiency while minimizing beam reflections from the receiver for safety considerations. We designed a multilayer absorber that can efficiently trap monochromatic light from broad incident angles. The proposed design is built on the concept of a one-way coherent absorber with inverse-designed aperiodic multilayer front- and back-reflectors that enable maximal optical absorption in a thin-film photovoltaic material for broad angles. We argue that the broad bandwidth is achieved through an optimization search process that automatically engineers the modal content of the cavity to create multiple overlapping resonant modes at the desired angle or frequency range. A realistic design is provided based on GaAs thin films with inverse-designed multilayer binary AlAs/AlGaAs mirrors. The proposed device can pave the way for efficient optical power beaming systems.
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Chappell, George_A ; Guilhabert, Benoit ; Garcia, Thor ; Zhao, Kuaile ; Watson, Ian_M ; Dawson, Martin_D ; Tamargo, Maria_C ; Hastie, Jennifer_E ( , Optical Materials Express)
Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-µm-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 µm2, similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at ∼520 nm and a thermal redshift of 4 nm with ∼3.6 MWm−2continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices.