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Creators/Authors contains: "Tiwari, Ashutosh"

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  1. Abstract

    We are reporting the effect of thickness on the Seebeck coefficient, electrical conductivity and power factor of Ca3Co4O9thin films grown on single-crystal Sapphire (0001) substrate. Pulsed laser deposition (PLD) technique was employed to deposit Ca3Co4O9films with precisely controlled thickness values ranging from 15 to 75 nm. Structural characterization performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the growth of Ca3Co4O9on Sapphire (0001) follows the island growth-mode. It was observed that in-plane grain sizes decrease from 126 to 31 nm as the thickness of the films decreases from 75 to 15 nm. The thermoelectric power measurements showed an overall increase in the value of the Seebeck coefficient as the films’ thickness decreased. The above increase in the Seebeck coefficient was accompanied with a simultaneous decrease in the electrical conductivity of the thinner films due to enhanced scattering of the charge carriers at the grain boundaries. Because of the competing mechanisms of the thickness dependence of Seebeck coefficient and electrical conductivity, the power factor of the films showed a non-monotonous functional dependence on thickness. The films with the intermediate thickness (60 nm) showed the highest power factor (~ 0.27 mW/m-K2at 720 K).

  2. Abstract

    Spin thermoelectrics represents a new paradigm of thermoelectricity that has a potential to overcome the fundamental limitation posed by the Wiedmann-Franz law on the efficiency of conventional thermoelectric devices. A typical spin thermoelectric device consists of a bilayer of a magnetic insulator and a high spin-orbit coupling (SOC) metal coated over a non-magnetic substrate. Pt is the most commonly used metal in spin thermoelectric devices due to its strong SOC. In this paper, we found that an alloy of Cu and Pt can perform much better than Pt in spin thermoelectric devices. A series of CuPt alloy films with different Pt concentrations were deposited on yttrium iron garnet (YIG) films coated gadolinium gallium garnet (GGG) substrate. Through spin Seebeck measurements, it was found that the Cu0.4Pt0.6/YIG/GGG device shows almost 3 times higher spin Seebeck voltage compared to Pt/YIG/GGG under identical conditions. The improved performance was attributed to the higher resistivity as well as enhanced spin hall angle of the CuPt layer.