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Abstract Controlled fabrication of nanopores in 2D materials offer the means to create robust membranes needed for ion transport and nanofiltration. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation; however, aberration‐corrected scanning transmission electron microscopy (STEM) offers the advantage of combining a sub‐Å sized electron beam for atomic manipulation along with atomic resolution imaging. Here, a method for automated nanopore fabrication is utilized with real‐time atomic visualization to enhance the mechanistic understanding of beam‐induced transformations. Additionally, an electron beam simulation technique, Electron‐Beam Simulator (E‐BeamSim) is developed to observe the atomic movements and interactions resulting from electron beam irradiation. Using the MXene Ti₃C₂T_x, the influence of temperature on nanopore fabrication is explored by tracking atomic transformations and find that at room temperature the electron beam irradiation induces random displacement and results in titanium pileups at the nanopore edge, which is confirmed by E‐BeamSim. At elevated temperatures, after removal of the surface functional groups and with the increased mobility of atoms results in atomic transformations that lead to the selective removal of atoms layer by layer. This work can lead to the development of defect engineering techniques within functionalized MXene layers and other 2D materials. 

Abstract Detailed studies of interfacial gas-phase chemical reactions are important for understanding factors that control materials synthesis and environmental conditions that govern materials performance and degradation. Out of the many materials characterization methods that are available for interpreting gas–solid reaction processes,in situandoperandotransmission electron microscopy (TEM) is perhaps the most versatile, multimodal materials characterization technique. It has successfully been utilized to study interfacial gas–solid interactions under a wide range of environmental conditions, such as gas composition, humidity, pressure, and temperature. This stems from decades of R&D that permit controlled gas delivery and the ability to maintain a gaseous environment directly within the TEM column itself or through specialized side-entry gas-cell holders. Combined with capabilities for real-time, high spatial resolution imaging, electron diffraction and spectroscopy, dynamic structural and chemical changes can be investigated to determine fundamental reaction mechanisms and kinetics that occur at site-specific interfaces. This issue ofMRS Bulletincovers research in this field ranging from technique development to the utilization of gas-phase microscopy methods that have been used to develop an improved understanding of multilength-scaled processes incurred during materials synthesis, catalytic reactions, and environmental exposure effects on materials properties. Graphical abstract 

Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N₂gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.