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Abstract The convergence of proton conduction and multiferroics is generating a compelling opportunity to achieve strong magnetoelectric coupling and magneto-ionics, offering a versatile platform to realize molecular magnetoelectrics. Here we describe machine learning coupled with additive manufacturing to accelerate the design strategy for hydrogen-bonded multiferroic macromolecules accompanied by strong proton dependence of magnetic properties. The proton switching magnetoelectricity occurs in three-dimensional molecular heterogeneous solids. It consists of a molecular magnet network as proton reservoir to modulate ferroelectric polarization, while molecular ferroelectrics charging proton transfer to reversibly manipulate magnetism. The magnetoelectric coupling induces a reversible 29% magnetization control at ferroelectric phase transition with a broad thermal hysteresis width of 160 K (192 K to 352 K), while a room-temperature reversible magnetic modulation is realized at a low electric field stimulus of 1 kV cm −1 . The findings of electrostatic proton transfer provide a pathway of proton mediated magnetization control in hierarchical molecular multiferroics. 

Non-Hermitian Hamiltonians may still have real eigenvalues, provided that a combined parity-time (ƤƮ) symmetry exists. The prospect of ƤƮ symmetry has been explored in several physical systems such as photonics, acoustics, and electronics. The eigenvalues in these systems undergo a transition from real to complex at exceptional points (EPs), where the ƤƮ symmetry is broken. Here, we demonstrate the existence of EP in magnonic devices composed of two coupled magnets with different magnon losses. The eigenfrequencies and damping rates change from crossing to anti-crossing at the EP when the coupling strength increases. The magnonic dispersion includes a strong “acoustic-like” mode and a weak “optic-like” mode. Moreover, upon microwave radiation, the ƤƮ magnonic devices act as magnon resonant cavity with unique response compared to conventional magnonic systems. 

We have investigated spin related processes in fullerene C 60 devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C 60 -based diodes; spin polarized carrier injection in C 60 -based spin-valves; and pure spin current generation in NiFe/C 60 /Pt trilayer devices. We found that the ‘curvature-related spin orbit coupling’ in C 60 plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C 60 diodes are dominated by the difference in the g -values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C 60 spin-valve devices, where spin polarized holes are injected into the C 60 interlayer. In addition, using the technique of spin-pumping in NiFe/C 60 /Pt trilayer devices with various C 60 interlayer thicknesses we determined the spin diffusion length in C 60 films to be 13 ± 2 nm at room temperature.