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Growth of α-Ga ₂ O ₃ on α-Al ₂ O ₃ by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

https://doi.org/10.35848/1347-4065/acbe04

McCandless, J. P.; Rowe, D.; Pieczulewski, N.; Protasenko, V.; Alonso-Orts, M.; Williams, M. S.; Eickhoff, M.; Xing, H. G.; Muller, D. A.; Jena, D.; et al (March 2023, Japanese Journal of Applied Physics)

Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy.
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Controlled Si doping of β -Ga ₂ O ₃ by molecular beam epitaxy

https://doi.org/10.1063/5.0101132

McCandless, J. P.; Protasenko, V.; Morell, B. W.; Steinbrunner, E.; Neal, A. T.; Tanen, N.; Cho, Y.; Asel, T. J.; Mou, S.; Vogt, P.; et al (August 2022, Applied Physics Letters)

We report controlled silicon doping of Ga 2 O 3 grown in plasma-assisted molecular beam epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier density, leading to over 5-orders of magnitude change in the electrical resistivity. Room temperature mobilities [Formula: see text] are achieved, with a peak value [Formula: see text] at a doping density of low-[Formula: see text]. Temperature-dependent Hall effect measurements exhibit carrier freeze out for samples doped below the Mott criterion. A mobility of [Formula: see text] is observed at [Formula: see text].
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Thermal stability of epitaxial α -Ga ₂ O ₃ and (Al,Ga) ₂ O ₃ layers on m-plane sapphire

https://doi.org/10.1063/5.0064278

McCandless, J. P.; Chang, C. S.; Nomoto, K.; Casamento, J.; Protasenko, V.; Vogt, P.; Rowe, D.; Gann, K.; Ho, S. T.; Li, W.; et al (August 2021, Applied Physics Letters)

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