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  1. Free, publicly-accessible full text available October 1, 2024
  2. β-Ga2O3is an emerging material and has the potential to revolutionize power electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared to Silicon Carbide and Gallium Nitride. Sinceβ-Ga2O3technology is still not mature, experimental study ofβ-Ga2O3is difficult and expensive. Technology-Computer-Aided Design (TCAD) is thus a cost-effective way to study the potentials and limitations ofβ-Ga2O3devices. In this paper, TCAD parameters calibrated to experiments are presented. They are used to perform the simulations in heterojunction p-NiO/n-Ga2O3diode, Schottky diode, and normally-off Ga2O3vertical FinFET. Besides the current-voltage (I-V) simulations, breakdown, capacitance-voltage (C-V), and short-circuit ruggedness simulations with robust setups are discussed. TCAD Sentaurus is used in the simulations but the methodologies can be applied in other simulators easily. This paves the road to performing a holistic study ofβ-Ga2O3devices using TCAD.

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  3. GaN-on-GaN vertical diode is a promising device for next-generation power electronics. Its breakdown voltage (BV) is limited by edge termination designs such as guard rings. The design space of guard rings is huge and it is difficult to optimize manually. In this paper, we propose an effective inverse design strategy to co-optimize BV and (V F Q) −1 , where BV, V F , and Q are the breakdown voltage, forward voltage, and reserve capacitive charge of the diode, respectively. Using rapid Technology Computer-Aided-Design (TCAD) simulations, neural network (NN), and Pareto front generation, a GaN-on-GaN diode is optimized within 24 hours. We can obtain structures with 200V higher BV at medium (V F Q) −1 or find a nearly ideal BV structure with 25% higher BV 2 /R on compared to the best randomly generated TCAD data. 
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