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Theκ-Ga2O3polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films ofκ-Ga2O3has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.more » « less
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Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, I. V.; Smirnov, N. B.; Vasilev, A. A.; Vergeles, P. S.; Yakimov, E. E.; Chernykh, A. V.; Ren, F.; Pearton, S. J. (, Applied Physics Letters)
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Yakimov, E. B.; Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Vergeles, P. S.; Yakimov, E. E.; Chernykh, A. V.; Xian, Minghan; Ren, F.; Pearton, S. J. (, Journal of Physics D: Applied Physics)
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Yakimov, E. B.; Polyakov, A. Y.; Shchemerov, I. V.; Smirnov, N. B.; Vasilev, A. A.; Vergeles, P. S.; Yakimov, E. E.; Chernykh, A. V.; Shikoh, A. S.; Ren, F.; et al (, APL Materials)null (Ed.)