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Abstract Optical phase modulators are critical components in integrated photonics, but conventional designs suffer from a trade-off between modulation efficiency and optical loss. Two-dimensional materials like graphene offer strong electro-optic effects, yet their high optical absorption at telecom wavelengths leads to significant insertion losses. Although monolayer transition metal dichalcogenides (TMDs) provide exceptional telecom-band transparency for low-loss electro-refractive response, their practical implementation in phase modulators requires top electrodes to enable vertical electric field tuning, which typically introduces parasitic absorption. Here, we address this challenge by developing hybrid tungsten oxyselenide/graphene (TOS/Gr) electrodes that minimize optical loss while enabling efficient phase modulation in TMD-based devices. The UV-ozone-converted TOS (from WSe₂) acts as a heavy p-type dopant for graphene, making the graphene transparent in the NIR region while enhancing its conductivity. Our complete device integrates a hybrid TOS/graphene transparent electrode with a hexagonal boron nitride dielectric spacer and monolayer WS₂electro-optic material on a SiN microring platform. This achieves a high modulation efficiency of 0.202 V·cm while maintaining an exceptionally low extinction ratio change of just 0.08 dB, demonstrating superior performance compared to modulators employing conventional electrodes. Our breakthrough in near-lossless phase modulation opens new possibilities for energy-efficient optical communications, photonic computing, and fault-tolerant quantum networks. 

Interfaces of van der Waals (vdW) materials, such as graphite and hexagonal boron nitride (hBN), exhibit low-friction sliding due to their atomically flat surfaces and weak vdW bonding. We demonstrate that microfabricated gold also slides with low friction on hBN. This enables the arbitrary post-fabrication repositioning of device features both at ambient conditions and in situ to a measurement cryostat. We demonstrate mechanically reconfigurable vdW devices where device geometry and position are continuously tunable parameters. By fabricating slidable top gates on a graphene-hBN device, we produce a mechanically tunable quantum point contact where electron confinement and edge-state coupling can be continuously modified. Moreover, we combine in situ sliding with simultaneous electronic measurements to create new types of scanning probe experiments, where gate electrodes and even entire vdW heterostructure devices can be spatially scanned by sliding across a target.