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Thermal annealing of organic semiconductors is critical for optimization of their electronic properties. The selection of the optimal annealing temperature –often done on a trial-and-error basis– is essential for achieving the most desired micro/nanostructure. While classical materials science relies on time-temperature-transformation (TTT) diagrams to predict such processing-structure relationships, this type of approach is yet to find widespread application in the field of organic electronics. In this work, we constructed a TTT diagram for crystallization of the widely studied organic semiconductor 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) from its melt. Thermal analysis in the form of isothermal crystallization experiments showed distinctly different types of behaviour depending on the annealing temperature, in agreement with classical crystal nucleation and growth theory. Hence, the TTT diagram correlates with the observed variation in the number of crystal domains, the crystal coverage and film texture as well as the obtained polymorph. As a result, we are able to rationalize the influence of the annealing temperature on the charge-carrier mobility extracted from field-effect transistor (FET) measurements. Evidently, the use of TTT diagrams is a powerful tool to describe structure formation of organic semiconductors and can be used to predict processing protocols that lead to optimal device performance. 

The weak intermolecular interactions inherent in organic semiconductors make them susceptible to defect formation, resulting in localized states in the band-gap that can trap charge carriers at different timescales. Charge carrier trapping is thus ubiquitous in organic semiconductors and can have a profound impact on their performance when incorporated into optoelectronic devices. This review provides a comprehensive overview on the phenomenon of charge carrier trapping in organic semiconductors, with emphasis on the underlying physical processes and its impact on device operation. We first define the concept of charge carrier trap, then outline and categorize different origins of traps. Next, we discuss their impact on the mechanism of charge transport and the performance of electronic devices. Progress in the filed in terms of characterization and detection of charge carrier traps is reviewed together with insights on future direction of research. Finally, a discussion on the exploitation of traps in memory and sensing applications is provided. 

Solution‐processable organic semiconductors can serve as the basis for new products including rollable displays, tattoo‐like smart bandages for real‐time health monitoring, and conformable electronics integrated into clothing or even implanted in the human body. For such exciting commercial applications to become a reality, good device performance and uniformity over large areas are necessary. The design of new materials has progressed at an astonishing pace, but accessing their intrinsic, efficient electrical properties in large‐area flexible device arrays is difficult. The development of protocols that allow integration with industrial‐scale processing for high‐throughput manufacturing, without the need to compromise on performance, is the key for transitioning these materials to real‐life applications. In this work, large‐area arrays of organic thin‐film transistors obtained by spray‐coating the high‐mobility polymer indacenodithiophene‐co‐benzothiadiazole (IDTBT) are demonstrated. A maximum charge carrier mobility of 2.3 cm²V⁻¹s⁻¹, with a very narrow performance distribution, is obtained over surface areas of 10 cm × 10 cm. The devices retain their electrical properties when bent multiple times and at different curvatures. In addition, large arrays of highly sensitive (0.25% change in mobility for 1% humidity variation), reusable, near‐identical humidity sensors are produced in a one‐step fabrication and calibrated from 0% to 94% relative humidity.

 

Radiation therapy is one of the most prevalent procedures for cancer treatment, but the risks of malignancies induced by peripheral beam in healthy tissues surrounding the target is high. Therefore, being able to accurately measure the exposure dose is a critical aspect of patient care. Here a radiation detector based on an organic field‐effect transistor (RAD‐OFET) is introduced, an in vivo dosimeter that can be placed directly on a patient's skin to validate in real time the dose being delivered and ensure that for nearby regions an acceptable level of low dose is being received. This device reduces the errors faced by current technologies in approximating the dose profile in a patient's body, is sensitive for doses relevant to radiation treatment procedures, and robust when incorporated into conformal large‐area electronics. A model is proposed to describe the operation of RAD‐OFETs, based on the interplay between charge photogeneration and trapping.

 

Hybrid organic–inorganic perovskites have recently gained immense attention due to their unique optical and electronic properties and low production cost, which make them promising candidates for a wide range of optoelectronic devices. But unlike most other technologies, the breakthroughs witnessed in hybrid perovskite optoelectronics have outgrown the basic understanding of the fundamental material properties. For example, the effectiveness of charge transport in relation to film microstructure and processing has remained elusive. In this study, field‐effect transistors are fabricated and evaluated in order to probe the nature and dynamics of charge transport in thin films of methylammonium lead iodide. A dramatic improvement is shown in the electrical properties upon solvent vapor annealing. The resulting devices exhibit ambipolar transport, with room‐temperature hole and electron mobilities exceeding 10 cm²V⁻¹s⁻¹. The remarkable enhancement in charge carrier mobility is attributed to the increase in the grain size and passivation of grain boundaries via the formation of solvent complexes.